Low voltage performance of an advanced CMOS/BiCMOS technology featuring 18 GHz bipolar fT and sub-70 ps CMOS gate delays
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- An advanced single-level polysilicon submicrometer BiCMOS technologyIEEE Transactions on Electron Devices, 1989