Preliminary c.w. reliability measurements on GaAs-(GaAl)As stripe lasers grown by metal-organic c.v.d.

Publisher Website
Google Scholar
Abstract
Oxide-insulated 20 μm planar stripe-geometry lasers were fabricated from a double heterostructure GaAs-(GaAl)As wafer grown by metal-organic chemical vapour deposition. Preliminary c.w. life tests have been carried out on these lasers, and 1400 h of operation has been achieved with only 19% increase in threshold current.