Hydrogenated amorphous silicon growth by CO2 laser photodissociation of silane

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Abstract
A new method of hydrogenated amorphous silicon deposition on large areas is reported in which silane is photodissociated by resonant absorption of cw CO2 laser radiation. The free radicals produced interact in a suitable geometrical configuration with the surface of a low‐temperature substrate and grow a film having properties similar to the glow‐discharge deposited material. The film amorphousness and the hydrogen presence either in monohydride and dihydride groups are evidenced by x‐ray patterns and ir spectra.