Au metal-induced lateral crystallisation (MILC)of hydrogenated amorphous silicon thin film with very low annealing temperatureand fast MILC rate
- 24 June 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (13) , 1108-1109
- https://doi.org/10.1049/el:19990743
Abstract
The Au metal-induced lateral crystallisation (Au-MILC) of a-Si:H film has been investigated under various crystallisation conditions. By annealing at 400°C for 10 h, the MILC rate induced by Au can be as large as 15.9 µm/h which is much faster than that possible with Ni and Pd. Owing to the very low annealing temperature treatment (≤ 400°C), the Au-MILC process represents an important technique for fabricating low cost ICs with poly-Si TFT structure on conventional glass substrate.Keywords
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