The Effect of Surface Structure on the Epitaxial Growth of Si on CoSi2(111)
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Two distinctively different structures were found on CoSi2(111), the CoSi2-C and the CoSi2-S, which correspond to, respectively, an essentially bulk-terminated surface and one which consists of an additional Si double layer. Details of the two structures suggest new growth techniques for Si epitaxy. Single crystal Si layers with either identical orientation as the silicide or a 180°-rotated orientation can be fabricated by use of carefully designed Si templates.Keywords
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