Interface formation at PbTe(100) surfaces: Ge, Al, and In overlayers

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Abstract
Adsorption processes were investigated for the first time on a IV–VI substrate, PbTe, by photoemission spectroscopy with synchrotron radiation Ge, Al, and In overlayers on cleaved PbTe(100) all create an inversion layer at the PbTe side of the interface. Substantial Pb and Te outdiffusion is observed even at room temperature, resulting in nonabrupt interfaces. The band discontinuities of the PbTe–Ge interface are much different from those theoretically predicted by the electron affinity rule.

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