X-ray photoemission spectrum of the III–VI layer compound GaTe in the region of the valence bands
- 1 May 1981
- journal article
- Published by Elsevier in Physica B+C
- Vol. 105 (1-3) , 59-64
- https://doi.org/10.1016/0378-4363(81)90215-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electronic structure of GaSe, GaS, InSe and GaTeJournal of Physics C: Solid State Physics, 1979
- Electronic properties of the III–VI layer compounds GaS, GaSe and InSe. II: PhotoemissionIl Nuovo Cimento B (1971-1996), 1979
- Electronic properties of the III–VI layer compounds GaS, GaSe and InSe. I: Band structureIl Nuovo Cimento B (1971-1996), 1979
- Near-band-edge optical properties ofmixed crystalsPhysical Review B, 1979
- An Investigation of the Electronic Structure of GaSe and GaTe by Photoelectron Spectroscopy, Using a Synchrotron Source, and Electron Energy Loss SpectroscopyPhysica Status Solidi (b), 1976
- Roothaan-Hartree-Fock atomic wavefunctionsAtomic Data and Nuclear Data Tables, 1974
- Valence band structures and core-electron energy levels in the monochalcogenides of gallium. Photoelectron spectroscopic studyJournal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1972
- Atomic Screening Constants from SCF Functions. II. Atoms with 37 to 86 ElectronsThe Journal of Chemical Physics, 1967
- The crystal structures of semiconductors and a general valence ruleActa Crystallographica, 1964
- Atomic Screening Constants from SCF FunctionsThe Journal of Chemical Physics, 1963