Measurements of reverse and forward bias absorptionand gain spectra in semiconductor lasermaterial
- 7 December 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (25) , 2179-2181
- https://doi.org/10.1049/el:19951483
Abstract
A simple technique for measuring absorption and gain spectra under reverse and forward bias in a two section semiconductor laser is described. Results are presented for an AlGaAs/GaAs multiquantum well laser. For reverse bias, exciton broadening and shifting are observed; and for forward bias, relative gain spectra are measured.Keywords
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