The Growth of Epitaxial Layers of Ga0.47In0.53As by the Vapor‐Phase Epitaxy‐Hydride Method Using a Gallium‐Indium Alloy Source
- 1 November 1984
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 131 (11) , 2722-2725
- https://doi.org/10.1149/1.2115392
Abstract
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