The memory effect of ZnS : Mn ac thin-film electroluminescence
- 1 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (7) , 452-454
- https://doi.org/10.1063/1.89738
Abstract
The electroluminescence of ZnS : Mn thin‐film memory devices is observed to occur in two components, one which is spatially homogeneous and one from localized bright regions less than ∼1 μm in diameter. The brightness‐voltage hysteresis, or memory effect, is observed to reside exclusively in the luminescence of the localized bright regions in our devices. It is concluded that the memory effect arises from a negative resistance of a filamentary ac conduction mechanism in these regions.Keywords
This publication has 3 references indexed in Scilit:
- Evidence for the direct impact excitation of Mn centers in electroluminescent ZnS:Mn filmsJournal of Applied Physics, 1976
- On state of amorphous threshold switchesJournal of Applied Physics, 1976
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968