Photoexcitation and Relaxation Mechanism of Electrons in Narrow Gap Semiconductors Doped with Amphoteric Deep Impurities
- 1 January 1989
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 38-41, 531-536
- https://doi.org/10.4028/www.scientific.net/msf.38-41.531
Abstract
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