Ohmic Contacts to GaAs Transferred Electron Devices

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Abstract
The specific contact resistance of Au/Ge/Ni alloy contacts to for transferred electron devices has been measured. It is found that a shallow sulfur diffusion under the contact is effective in reducing the specific contact resistance by up to two orders of magnitude. This procedure is expected to improve the uniformity of threshold and bias voltages in integrated circuit configurations by making the contact resistance only 1–10% of the total device resistance.

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