Continuous ultra-dry process for enhancing the reliability of ultrathin silicon oxide films in metal–oxide semiconductors
- 1 November 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (6) , 3112-3117
- https://doi.org/10.1116/1.587487