X‐Ray Diffraction Topography and Crystal Characterization of GaN Epitaxial Layers for Light‐Emitting Diodes
- 1 December 1978
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 125 (12) , 2076-2078
- https://doi.org/10.1149/1.2131366