Dynamics and structural assessment of open semiconductor surfaces: GaAs(110)
- 15 December 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (18) , 11942-11945
- https://doi.org/10.1103/physrevb.42.11942
Abstract
We present a bond-charge-model slab calculation for the surface dynamics of GaAs(110), which represents an example of an open surface with unsaturated dangling bonds. The comparison to previously reported and some new He inelastic-scattering data for the low-frequency region provides information on the surface geometry.Keywords
This publication has 23 references indexed in Scilit:
- Dynamics of extensively reconstructed surfaces: Si(111) 2×1Physical Review Letters, 1989
- Surface Phonons on GaAs(110) Measured by Inelastic Helium Atom ScatteringEurophysics Letters, 1987
- Raman phonon piezospectroscopy in GaAs: Infrared measurementsPhysical Review B, 1987
- Observation of a 10-meV Einstein Oscillator Mode on the Si(111) (2×1) SurfacePhysical Review Letters, 1986
- Phonon eigenvector determination in GaAs by inelastic neutron scatteringJournal of Physics C: Solid State Physics, 1986
- Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structurePhysical Review B, 1985
- The geometric structures of the GaAs(111) and (110) surfacesJournal of Vacuum Science & Technology B, 1984
- Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, and-Bonded ChainsPhysical Review Letters, 1982
- Theory of the Third-Order Elastic Constants of Diamond-Like CrystalsPhysical Review B, 1966
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966