Effect of temperature gradients on the first-order Raman spectrum of Si
- 1 January 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1) , 125-127
- https://doi.org/10.1063/1.94575
Abstract
We report the results of measurements of the first-order Raman spectrum of Si under conditions of large temperature inhomogeneities generated by a critically focused cw laser beam. We find that the Stokes and anti-Stokes bands are extensively deformed due to large asymmetric broadenings which develop on the side of the low-frequency shifts. The broadenings are thus attributed to temperature gradients and are shown to be important in determining temperature distributions.Keywords
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