High-reflectivity visible-wavelength semiconductor native oxide Bragg reflectors grown by metalorganic chemical vapor deposition
- 22 May 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (21) , 2831-2833
- https://doi.org/10.1063/1.113444
Abstract
The growth and fabrication of high‐quality vertical distributed Bragg reflectors (DBRs) utilizing layers of InAlP and the AlAs native oxide are reported. The III–V epitaxial structures employed in this work consist of alternating layers of InAlP and AlAs grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition (MOCVD). The DBR mirrors are formed by selective lateral oxidation of the AlAs layers (H2O vapor + N2, 450 °C) resulting in a layered structure of single‐crystal InAlP and amorphous AlxOy. The oxidized vertical DBR mirrors having only 4.5 pairs exhibit high reflectivity in the 96%–99% range over a wide spectral region (Δλ∼200 nm). The structural and optical properties of these DBR mirrors have been measured and show that the reflectors are of high quality.Keywords
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