Low current plasma effect optical switch on InP
- 18 January 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (2) , 115-117
- https://doi.org/10.1049/el:19900079
Abstract
Optical InP/GaInAsP directional coupler switches with a total length of 2 mm have been fabricated and operated by carrier injection. Switching is achieved at a very low injection current of 4 mA. For both switching states a crosstalk suppression exceeding 20dB is obtained. In addition, the insertion loss estimated from the loss contributions of waveguides, bends and free carriers is as low as l.3dB.Keywords
This publication has 0 references indexed in Scilit: