A Consideration of the Chemical Shift in ESCA Spectra from Oxide/Semiconductor Interface

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Abstract
Apparent chemical shift of core- and Auger electrons between oxide and substrate GaP are studied by ESCA. The shifts of Ga 3d, P 2p and Ga Auger for the anodic oxide/GaP-interface are larger than those values for the thermal oxide/GaP-interface by about 1 eV, which is interpreted as the difference in the Fermi level pinning position of the substrate, not the chemical structure of oxide. These results suggest that to identify the chemical state of the over-layer on a semiconductor by “chemical shift”, it is necessary to take into account the band bending of the semiconductor surface.