AlGaN/GaN dual-gate modulation-doped field-effecttransistors
- 27 May 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (11) , 933-935
- https://doi.org/10.1049/el:19990627
Abstract
The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 µm gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5 W/mm at 4 GHz. The corresponding large-signal gain is 11.5 dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for the broadband power amplifiers.Keywords
This publication has 3 references indexed in Scilit:
- DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substratesIEEE Electron Device Letters, 1998
- Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHzIEEE Electron Device Letters, 1997
- GaAs dual-gate Schottky-barrier FET's for microwave frequenciesIEEE Transactions on Electron Devices, 1975