Ge Layer Transfer To Si For Photovoltaic Applications
- 1 January 2001
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substratesApplied Physics Letters, 1997
- Analysis of Bonding‐Related Gas Enclosure in Micromachined Cavities Sealed by Silicon Wafer BondingJournal of the Electrochemical Society, 1997
- Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Hydrophobic silicon wafer bondingApplied Physics Letters, 1994
- Physics of Semiconductor DevicesPhysics Today, 1970