Diamond films by ion-assisted deposition at room temperature

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Abstract
Hard carbon films were prepared by ion beam sputter deposition. A graphite disk was used as a target. An electron-bombardment ion source emitted the argon ion beam whose energy and current were 1200 eV and 60 mA, respectively. The surface of a substrate was set in a direction which was almost parallel to the direction of the ion beam. The ion beam sputtered the carbon target and also affected the surface of the substrate. The substrate was kept at room temperature during the deposition. The deposited carbon film was so-called i carbon. Vicker’s hardness of the film, which was deposited on the Si substrate and 1.5 μm in thickness, was more than 3000 kg/mm2 for 10 g of load. When the ion beam contained hydrogen, diamond crystal particles of 0.1 to 1 μm in diameter were observed in an amorphous matrix. It was confirmed by electron diffraction analysis that the crystal particles had the cubic or hexagonal diamond structure. The ion bombardment gave shock-quenched conditions in a microscopic area. Sometimes it was observed that the particles exhibited well-defined morphology of the cubic diamond.

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