Atomic diffusion-induced deep levels near ZnSe/GaAs(100) interfaces
- 12 June 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (24) , 3301-3303
- https://doi.org/10.1063/1.113737
Abstract
Luminescence spectroscopy measurements of ZnSe/GaAs(100) heterojunctions grown by molecular beam epitaxy reveal the formation of deep levels near ‘‘buried’’ interfaces upon thermal annealing. A pronounced emission at 1.9–2.0 eV appears at temperatures in the 300–400 °C range depending on the ZnSe growth conditions with a constant activation energy of 1.10 eV. X-ray photoemission spectroscopy indicates a correlation between this deep level and atomic diffusion of Ga and Zn across the heterointerface. Zn-rich ZnSe growth conditions dramatically reduce this emission, highlighting the importance of local interface composition on thermal stability.Keywords
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