X-ray escape peak variations in diodes made from doubly travelling solvent grown p-type CdTe
- 1 January 1977
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 12 (2) , 293-296
- https://doi.org/10.1051/rphysap:01977001202029300
Abstract
The dependence of the escape peak height on the applied diode voltage was measured at diodes made from doubly travelling solvent grown CdTe. The crystal was In-doped with a concentration of 2.1 × 1016 cm-3 and p-type with a resistivity of 4 x 106 Ω.cm. The escape peak height saturates at higher voltages. The theoretical dependence of the X-ray escape probability on space charge layer depth was derived. A method for evaluating the experimental curve according to the thoeretical correlation was developped : it yields the actual space charge layer depth and the space charge densityKeywords
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