Self-Assembly of Si Clusters into Single Crystal Arrangements: Formation of Si10Cluster Crystals

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Abstract
Single crystals of Si clusters were created at an air/solution interface or a hydrogen-terminated Si substrate/solution interface using a self-assembly process, which originated from the hydrophobic nature of Si clusters. Mass analysis indicated that the components of the cluster crystals were partially oxidized hydrogenated Si10 clusters. At the interfaces the nearest-neighbor distances between lattice points in the Si cluster crystals were 0.53 nm and 0.60 nm, which are consistent with the diameters of the Si10 clusters. The slight difference in these values seems to be due to variations in the surface passivation of the component Si10 clusters.

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