Consequences of structural disorder on laser properties in quantum wire lasers
- 1 August 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (8) , 835-837
- https://doi.org/10.1109/68.149879
Abstract
The effect of interface-roughness-related disorder on the electronic and optoelectronic properties of a quantum wire structure are studied. It is seen that the disorder causes strong localization in the quasi-one-dimensional system. While the electronic states are seriously perturbed, the density of states is not affected drastically. Optoelectronic properties as reflected in the interband transition related phenomenon are not found to suffer significant deterioration as a result of the disorder. However, the results suggest that intraband relaxation processes may be seriously affected because of electron (hole) states being localized in different regions of the wire.<>Keywords
This publication has 5 references indexed in Scilit:
- Effect of structural disorder on electronic states in GaAs/AlGaAs quantum wiresApplied Physics Letters, 1991
- Gain and the threshold of three-dimensional quantum-box lasersIEEE Journal of Quantum Electronics, 1986
- Quantum noise and dynamics in quantum well and quantum wire lasersApplied Physics Letters, 1984
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982
- Green’s Functions in Quantum PhysicsPublished by Springer Nature ,1979