A Radiation Hardened Nonvolatile MNOS RAM

1 January 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 30 (6) , 4270-4272
https://doi.org/10.1109/tns.1983.4333120

Abstract

A radiation hardened nonvolatile MNOS RAM (SA2998) is being developed at Sandia National Laboratories. The memory organization is 128 × 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The device requires +10 V and +25 V for operation. The devices have memory retention after a dose-rate exposure of lE12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s.

Keywords

RADIATION HARDENING
RANDOM ACCESS MEMORY
READ-WRITE MEMORY
CLOCKS
NONVOLATILE MEMORY
LABORATORIES
MICROPROCESSORS
CMOS MEMORY CIRCUITS
CMOS PROCESS
SILICON

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