MOSFET Characteristics in low-temperature plasma-enhanced chemical vapor deposited epitaxial silicon

1 April 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (4) , 206-207
https://doi.org/10.1109/EDL.1986.26347

Abstract

The fabrication of high-quality MOSFET's using low-temperature (750-800°C) Plasma-Enhanced Chemical Vapor Deposited (PECVD) epitaxial silicon is reported here for the first time. The fabricated devices include PMOS transistors with hole channel mobilities of 213 cm 2 /V.s (versus 218 cm 2 /V.s in bulk silicon controls) and NMOS transistors with electron channel mobilities of 520 cm 2 /V.s (versus 560 cm 2 /V.s in bulk silicon controls), and with an on-current to off-current ratio of 10 7 . These results indicate that epitaxial silicon films deposited by the PECVD technique are of high quality, even though the epitaxial deposition temperature was only 750-800°C.

Keywords

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