Dependence of ionizing radiation induced hFE degradation on emitter periphery
- 1 April 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 21 (2) , 41-42
- https://doi.org/10.1109/TNS.1974.6499150
Abstract
The current gain (hFE) of planar bipolar transistors degrades when such devices are exposed to ionizing radiation because of the increase in the base surface current. This increase is due to two phenomena that are a result of the interaction of the radiation and the passivation layer over the base: 1) positive charge accumulation in the passivation layer, generally near the semiconductor-insulator interface, and 2) creation of fast surface states at the interface.1,2Keywords
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