Short-cavity GaAlAs laser by wet chemical etching

30 September 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (20) , 879-880
https://doi.org/10.1049/el:19820596

Abstract

A short-cavity (GaAl)As stripe geometry laser with a threshold current of 30 mA has been fabricated by a new chemical etch process which uses a multilayer metal mask. The laser is 23 μm long and 12 μm wide, and does not have reflective coatings on the etched facets. Quasi-single-mode operation is obtained in pulsed conditions.

Keywords

SEMICONDUCTOR JUNCTION LASERS
PULSED CONDITIONS
SHORT-CAVITY (GAAL)AS STRIPE GEOMETRY LASER
SEMICONDUCTOR TECHNOLOGY
CHEMICAL ETCH PROCESS
WET CHEMICAL ETCHING
QUASI-SINGLE-MODE OPERATION
THRESHOLD CURRENT
FABRICATION
GAALAS LASER
MULTILAYER METAL MASK

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