High-efficiency energy up-conversion at GaAs-GaInP2 interfaces

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Abstract
Luminescence far above the excitation energy is observed at GaAs‐ GaInP2 interfaces. The intensity of this up‐converted signal varies superlinearly with excitation density. Up‐converted photoluminescence excitation spectroscopy shows that the signal disappears if the excitation energy is tuned below the GaAs band gap. It is concluded that cold Auger processes and the presence of metastable states in the GaInP2, induced by residual CuPt ordering, cause this nonlinear effect at these type I interfaces.

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