Monte Carlo Study of Charge Injection Transistors (CHINTs)

Publisher Website
Google Scholar
Abstract
Self-consistent Monte Carlo simulation of the characteristics of charge injection transistors (CHINTs), with special focus on the bias voltage and the channel length dependences of these characteristics, shows that the transconductance of CHINTs increases with increasing collector voltage until the leak current becomes extremely high. Simulation also reveals that the area associated with real-space transfer (RST) is about one-third of the channel, suggesting that CHINTs can operate faster than conventional metal-insulator-semiconductor field-effect transistors (MISFETs). We also investigated the number of electrons that transfer from each valley for two different band configurations and found that RST from the L-valley in GaAs dominates even though the energy level of the L-valley is greater than the heterobarrier height.