I-V and C-V characteristics of Au/TiO2 Schottky diodes
- 1 June 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6) , 3310-3312
- https://doi.org/10.1063/1.328037
Abstract
The electrical characteristics of Au/n-TiO2 Schottky diodes have been studied using I-V and C-V measurements. TiO2 samples with working face perpendicular to the c axis are reduced in a vacuum of 10−6 Torr at 800 °C for about 5 h and then quenched. The resistivities are in the range 20–30 Ω cm. The barrier heights deduced from I-V characteristics in agreement with the thermionic emission theory are in the range 0.87–0.94 eV. C-V data yield lower barrier heights and show a frequency dependence attributed to relaxation phenomena occurring in a disturbed layer near the surface. Comparison with results relative to Au/n-SrTiO3 diodes shows that the barrier heights obey the Schottky model for these ionic semiconductors, confirming the role of the electron affinity in the band bending formation.This publication has 11 references indexed in Scilit:
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