New Millimeter Wave Noise Sources with High Reliability
- 1 January 1987
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 525-528
- https://doi.org/10.1109/mwsym.1987.1132450
Abstract
Two new highly reliable broadband millimeter wave noise sources have been developed. One operates from 26.5 to 40 GHz , R-band, and the other from 33 to 50 GHz , Q-band. The R-band source has an excess noise ratio of 12.1+-0.4 dB with a reflection coefficient of less than .11 when turned on. The Q-band source has an excess noise ratio of 10+-1.8 dB with a reflection coefficient of less than .16 when turned on. A new GaAs avalanche diode specifically designed for high noise output and long term reliability was developed for the noise source. The diode with its embedding structure will be described. Reliability data as well as noise measurement techniques and examples will also be presented.Keywords
This publication has 2 references indexed in Scilit:
- Effects of time dependence of multiplication process on avalanche noiseSolid-State Electronics, 1973
- Electronic tuning effects in the read microwave avalanche diodeIEEE Transactions on Electron Devices, 1966