High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The results of experimental study and design criteria of high efficiency power heterojunction bipolar transistors (HBTs) are reported and discussed. Self-aligned npn HBTs fabricated by dry process technology have shown excellent device characteristics with low collector offset voltage (Keywords
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