The use of generalised models to explain the behaviour of ohmic contacts to n-type GaAs
- 31 December 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (12) , 1705-1708
- https://doi.org/10.1016/0038-1101(92)90249-c
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electron tunneling and contact resistance of metal-silicon contact barriersPublished by Elsevier ,2002
- A method for low-concentration phosphorus diffusion by ambient controlSolid-State Electronics, 1986
- An improved model to explain ohmic contact resistance of f-GaAs and other semiconductorsSolid-State Electronics, 1986
- Transport across a high—low barrier and its influence on specific contact resistivity of a metal—n-GaAs ohmic systemIEEE Electron Device Letters, 1985
- Generalized theory of conduction in schottky barriersSolid-State Electronics, 1983
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- New explanation of N
D
−1 dependence of specific contact resistance for n -GaAsElectronics Letters, 1982
- Comments on the conduction mechanism in Schottky diodesJournal of Physics D: Applied Physics, 1972
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966