Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Excitonic recombination in GaN grown by molecular beam epitaxyApplied Physics Letters, 1995
- Doping of gallium nitride using disilaneJournal of Electronic Materials, 1995
- Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- Observation of optically detected magnetic resonance in GaN filmsApplied Physics Letters, 1993
- The nature of donor conduction in n-GaNJournal of Applied Physics, 1993
- Photoluminescence characterization of cubic SiC grown by chemical vapor deposition on Si substratesJournal of Crystal Growth, 1990
- Donor binding energies determined from temperature dependence of photoluminescence spectra in undoped and aluminum-doped beta SiC filmsApplied Physics Letters, 1988
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Low-Temperature Luminescence of GaNJournal of Applied Physics, 1970
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960