ZnCdSe/ZnSe Quantum-Well Laser Diode on a (711)A GaAs Substrate

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Abstract
For the purpose of increasing the acceptor concentration in p-type ZnSe, nitrogen-doped ZnSe was grown on ( n11) GaAs substrates. An acceptor concentration twice as large as that on a (100) substrate was obtained and found to be reproducible, except for (111) substrates, on which ZnSe films showed high resistivity. The PL characteristics of ZnCdSe/ZnSe single quantum wells (SQWs) on a ( n11) substrate were also examined. The PL spectrum showed a blue shift mainly caused by the smaller Cd composition on a ( n11) substrate than that on a (100) substrate. Finally, a ZnCdSe/ZnSe MQW SCH laser with HR-coated facets, a 900-µ m-long cavity, and a 20-µ m stripe contact was fabricated on a (711)A substrate. The built-in voltage of a LD on the (711)A substrate is 5 V lower than a LD on the (100) substrate. The former oscillated under pulsed operation at 25°C with a threshold current of 3.1 A and an oscillation wavelength of 501 nm.