Effect of Doping on Exciton States in InSe and GaSe Lamellar Semiconductors
- 16 November 1991
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 128 (1) , 235-242
- https://doi.org/10.1002/pssa.2211280126
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Photoluminescence and photoconductivity of indium selenide single crystals doped with rare-earth elementsSolid State Communications, 1985
- Photoluminescence of GaSe:Tm Single CrystalsPhysica Status Solidi (b), 1985
- Efficient energy transfer from band excitation to Nd3+in β-La2S3:Nd, CeJournal of Physics C: Solid State Physics, 1982
- Polytypes and Excitons in GaSe1-xSx Mixed CrystalsJournal of the Physics Society Japan, 1980
- Absorption and electroabsorption near the indirect edge of GaSeSolid State Communications, 1977
- Exciton Absorption in Doped GermaniumPhysica Status Solidi (b), 1967
- Zur Polytypie des Galliummonoselenids, GaSeZeitschrift für Naturforschung B, 1961
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960
- Mobile and Immobile Effective-Mass-Particle Complexes in Nonmetallic SolidsPhysical Review Letters, 1958