High-speed optoelectronic sampling with semiconductor-laser pulsed coplanar photoconductor

16 August 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (17) , 684-685
https://doi.org/10.1049/el:19840469

Abstract

A semiconductor-laser strobed photoconductive sampling gate for the measurement of ultra-high-speed electronic signals on coaxial lines is reported. For the short response (0.1 A/W) at the 830 nm laser wavelength the sampling gate uses a miniaturised (8×8×1 μm) epitaxial GaAs photoconductor on a broadband tapered coplanar 50 Ω microwave structure.

Keywords

COPLANAR 50 OHM MICROWAVE STRUCTURE
SEMICONDUCTOR-LASER STROBED PHOTOCONDUCTIVE SAMPLING GATE
ULTRA HIGH SPEED ELECTRONIC SIGNALS MEASUREMENT
SEMICONDUCTOR-LASER PULSED COPLANAR PHOTOCONDUCTOR
III-V SEMICONDUCTORS
COAXIAL LINES
BROADBAND
OPTOELECTRONIC SAMPLING
LASER WAVELENGTH 830 NM
GAAS PHOTOCONDUCTOR
RESPONSIVITY
RESPOSE TIME 100 PS

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