Fast photoconductive GaAs detectors made by laser stimulated MOCVD

17 February 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (4) , 142-143
https://doi.org/10.1049/el:19830100

Abstract

Photoconductive detectors with rise times less than 10 ps have been made from GaAs grown by laser-stimulated MOCVD. The growth temperature was 450°C, and laser pulse energy and pulse repetition frequency were 120 mJ and 10 Hz, respectively.

Keywords

LASER PULSE REPETITION FREQUENCY
10 HZ
PHOTOCONDUCTIVE GAAS DETECTORS
ELECTRIC SENSING DEVICES
LASER STIMULATED MOCVD
III-V SEMICONDUCTORS
120 MJ
SEMICONDUCTOR DEVICES
METALORGANIC CVD
GROWTH TEMPERATURE
LASER PULSE ENERGY
450DEGREES C

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