Microstructure and Nonohmic Properties of ZnO-V2O5 Ceramics

Abstract
The microstructure and nonohmic characteristics of polycrystalline ZnO-V2O5 ceramics with V2O5 as the only additive ranging from 0 to 2 mol% were investigated. An abnormal grain growth was observed for ZnO doped with V2O5 and sintered at 900° C. However, the non-uniformity of the grain structure alleviated with increasing the V2O5 content or sintering temperature. The ZnO-V2O5 ceramics have shown characteristics of nonohmic V-I behavior and large apparent dielectric constant with a relaxation peak of 0.36 eV at 300 kHz. The electrical properties of these ZnO-V2O5 ceramics depended strongly on the processing conditions and V2O5 content, and there seems a close relation between the nonlinear electric properties and the concentration of the deeply-trapped defects at 0.36 eV in ZnO.

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