Scaling behavior of the magnetization of Si:B
- 30 November 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 60 (6) , 513-516
- https://doi.org/10.1016/0038-1098(86)90728-3
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Scaling behavior of the magnetization of insulating Si:PPhysical Review B, 1986
- Magnetic properties of boron-doped siliconPhysical Review B, 1985
- Low-temperature magnetic properties of submetallic phosphorous-doped siliconPhysical Review B, 1984
- Scaling Studies of Highly Disordered Spin-½ Antiferromagnetic SystemsPhysical Review Letters, 1982
- Low-temperature magnetic susceptibility of Si: P in the nonmetallic regionPhysical Review B, 1981
- Clustering in the approach to the metal-insulator transitionPhilosophical Magazine Part B, 1980
- Resistivity‐Dopant Density Relationship for Boron‐Doped SiliconJournal of the Electrochemical Society, 1980
- Hierarchy of Exchange Interactions in a Disordered Magnetic SystemPhysical Review Letters, 1980
- Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped SiliconPhysical Review B, 1973
- Paramagnetic Resonance Absorption from Acceptors in SiliconPhysical Review Letters, 1960