Hybrid Circuit Simulator Including a Model for Single Electron Tunneling Devices
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4R) , 2028-2032
- https://doi.org/10.1143/jjap.38.2028
Abstract
A hybrid circuit simulator has been developed that incorporates elements of single electron devices into the conventional circuit simulator SPICE (Simulation Program with Integrated Circuit Emphasis). The elements can consist of an arbitrary network of tunnel junctions and capacitors, whose characteristics are calculated using a master equation method. By employing the hybrid circuit simulator, we studied a turnstile device feeding the input of a complementary metal-oxide-semiconductor (CMOS) inverter, and were able to more successfully demonstrate the transfer of electrons through the turnstile one by one in SPICE.Keywords
This publication has 8 references indexed in Scilit:
- Circuit Simulators Aiming at Single-Electron IntegrationJapanese Journal of Applied Physics, 1998
- A silicon Coulomb blockade device with voltage gainApplied Physics Letters, 1997
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETsJapanese Journal of Applied Physics, 1997
- A numerical study of the accuracy of single-electron current standardsJournal of Applied Physics, 1996
- Single-electron transistor logicApplied Physics Letters, 1996
- A numerical study of the dynamics and statistics of single electron systemsJournal of Applied Physics, 1995
- Accuracy of the electron pumpPhysical Review B, 1992
- Frequency-locked turnstile device for single electronsPhysical Review Letters, 1990