Inelastic light scattering in the regimes of the integer and fractional quantum Hall effects
- 1 November 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (11) , 1865-1870
- https://doi.org/10.1088/0268-1242/9/11S/003
Abstract
Recent resonant inelastic light scattering experiments in the fractional quantum Hall regime highlight the power of the method in studies of election-electron interactions in semiconductors of reduced dimensions. We review here light scattering experiments that determine gap excitations in the regimes of the integer and fractional quantum Hall effects. At integer values of the Landau level filling factor we consider inter-Landau level excitations. In the fractional quantum Hall regime we discuss the determination of long-wavelength gap excitations and spin waves in the incompressible quantum fluid at filling factor 1/3.Keywords
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