Operation of field-effect transistors at liquid-helium temperature
- 1 May 1967
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 3 (5) , 210-211
- https://doi.org/10.1049/el:19670163
Abstract
D.C. operation of silicon m.o.s.t., devices of pchannel enhancement and nchannel depletion types at 4°K is described. The former has transfer and drain characteristics at 4°K which are substantially similar to those at room temperature. The latter has a nonlinear ID/VD characteristic. A large drain ‘threshold’ is found in a few devices and is traced to the absence of gate overlap with drain and source contacts.Keywords
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