Electron-Hole Scattering in Solids Exhibiting Band-Gap Impact Ionization
- 1 July 1963
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 2 (7) , 381-385
- https://doi.org/10.1143/jjap.2.381
Abstract
For semiconductors showing band-gap impact ionization the density of electron-hole pairs can become high enough to lower the electron mobility significantly. It is shown that the observed drop in electron drift velocity in both InAs and InSb can be plausibly explained by the onset of such strong electron-hole scattering. The role of self-pinching as it affects the electron-hole scattering is considered in detail.Keywords
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