In situ infrared transmission spectroscopy of nucleation and growth of amorphous hydrogenated silicon
- 23 December 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (26) , 4041-4043
- https://doi.org/10.1063/1.117864
Abstract
We present a series of IR transmission spectra with submonolayer resolution of the initial growth of amorphous hydrogenated silicon (a‐Si:H) deposited by F2 laser (157 nm) chemical vapor deposition. The film thickness was measured simultaneously using a quartz crystal microbalance with appropriate sensitivity. The presented technique allows the evolution of the H content and bonding configuration on a silicon substrate to be monitored during nucleation and growth. It provides a comparable or even higher sensitivity than that achieved by reflection absorption spectroscopy using metal surfaces or methods applying multilayer ‘‘optical cavity’’ structures to enhance the IR absorption.Keywords
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