Solid-state reaction of Ti and sapphire
- 1 March 1978
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 15 (2) , 240-242
- https://doi.org/10.1116/1.569489
Abstract
The growth-rate of the products of the solid-state reaction between a polycrystalline Ti thin films and polished. (111) -oriented sapphire (A1203) wafers was determined from 757 to 839 K by combing Auger electron spectroscopy and Ar-ion-beam sputtering. A parabolic growth rate was fit to the data: The activation energy of the rate constant was 170 kJ mol−1 K−1. The rate constant was smaller for a Ti thin film epitaxially grown on a wafer.Keywords
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