High performance InP-based heterostructure barriervaractors in single and stack configuration
- 18 July 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (15) , 1417-1418
- https://doi.org/10.1049/el:19960893
Abstract
Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As blocking conduction layers have been fabricated and characterised. The devices, whose electrical properties scale with layer complexity, exhibit, for a DHBV scheme, leakage currents as low as 10 A/cm2 at 12 V, a zero bias capacitance of 1 fF/µm2, and a capacitance ratio of 5:1.Keywords
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